First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy

Norihisa Oyama, Eiji Ohta, Kyozaburo Takeda, Kenji Shiraishi, Hiroshi Yamaguchi

研究成果: Conference article査読

11 被引用数 (Scopus)


The misfit dislocation core structures in InAs/GaAs(110) heterostructures were calculated for InAs thicknesses of 2 and 4 ML using first-principles calculations. Dislocation cores with asymmetric five-fold coordinated In atoms were formed at the InAs/GaAs interface. This core structure is maintained even if the thickness of InAs epilayer increases. We also calculated for the GaAs/InAs(110) heterostructure and the core has a different structure at the very initial stage of heteroepitaxy.

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学


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