The misfit dislocation core structures in InAs/GaAs(110) heterostructures were calculated for InAs thicknesses of 2 and 4 ML using first-principles calculations. Dislocation cores with asymmetric five-fold coordinated In atoms were formed at the InAs/GaAs interface. This core structure is maintained even if the thickness of InAs epilayer increases. We also calculated for the GaAs/InAs(110) heterostructure and the core has a different structure at the very initial stage of heteroepitaxy.
|出版ステータス||Published - 1999 8月 2|
|イベント||Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10) - Birmingham, UK|
継続期間: 1998 8月 31 → 1998 9月 4
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