TY - JOUR
T1 - First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy
AU - Oyama, Norihisa
AU - Ohta, Eiji
AU - Takeda, Kyozaburo
AU - Shiraishi, Kenji
AU - Yamaguchi, Hiroshi
N1 - Funding Information:
This work was partly supported by the JSPS Research for Future Programs in the Area of Atomic Scale Surface and Interface Dynamics, the High-tech Research Center Project, and the Ministry of Education, Science, Sports and Culture of Japan.
PY - 1999/8/2
Y1 - 1999/8/2
N2 - The misfit dislocation core structures in InAs/GaAs(110) heterostructures were calculated for InAs thicknesses of 2 and 4 ML using first-principles calculations. Dislocation cores with asymmetric five-fold coordinated In atoms were formed at the InAs/GaAs interface. This core structure is maintained even if the thickness of InAs epilayer increases. We also calculated for the GaAs/InAs(110) heterostructure and the core has a different structure at the very initial stage of heteroepitaxy.
AB - The misfit dislocation core structures in InAs/GaAs(110) heterostructures were calculated for InAs thicknesses of 2 and 4 ML using first-principles calculations. Dislocation cores with asymmetric five-fold coordinated In atoms were formed at the InAs/GaAs interface. This core structure is maintained even if the thickness of InAs epilayer increases. We also calculated for the GaAs/InAs(110) heterostructure and the core has a different structure at the very initial stage of heteroepitaxy.
UR - http://www.scopus.com/inward/record.url?scp=0033329446&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033329446&partnerID=8YFLogxK
U2 - 10.1016/S0039-6028(99)00524-5
DO - 10.1016/S0039-6028(99)00524-5
M3 - Conference article
AN - SCOPUS:0033329446
SN - 0039-6028
VL - 433
SP - 900
EP - 903
JO - Surface Science
JF - Surface Science
T2 - Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10)
Y2 - 31 August 1998 through 4 September 1998
ER -