TY - GEN
T1 - Flexible polymer atomic switches using ink-jet printing technique
AU - Mohapatra, Saumya R.
AU - Tsuruoka, Tohru
AU - Hasegawa, Tsuyoshi
AU - Terabe, Kazuya
AU - Aono, Masakazu
N1 - Funding Information:
This work was supported in part by KAKENHI-23656024 from MEXT, Japan.
PY - 2012
Y1 - 2012
N2 - Gapless-type atomic switches were fabricated on a flexible plastic substrate by printing 'solid polymer electrolyte' (SPE) layers using suitable ink and drop-on-demand ink-jet technique. High surface energy difference between Pt microelectrode patterned on the plastic substrate and the substrate itself, led to the successful printing of electrolytic solution on a bottom Pt electrodes. Bipolar resistive switching behavior was observed in Ag/SPE/Pt cross-point structures under electrical bias. The switching between ON and OFF states is attributed to the formation and dissolution of a metal filament between the electrodes. The cells also exhibited stable switching behavior under mechanical stress as performed by substrate bending. Switching characteristics measured under mechanical stress and without stress are matching well. The results demonstrate that the SPE-printed atomic switch has great potential for flexible switch/memory applications.
AB - Gapless-type atomic switches were fabricated on a flexible plastic substrate by printing 'solid polymer electrolyte' (SPE) layers using suitable ink and drop-on-demand ink-jet technique. High surface energy difference between Pt microelectrode patterned on the plastic substrate and the substrate itself, led to the successful printing of electrolytic solution on a bottom Pt electrodes. Bipolar resistive switching behavior was observed in Ag/SPE/Pt cross-point structures under electrical bias. The switching between ON and OFF states is attributed to the formation and dissolution of a metal filament between the electrodes. The cells also exhibited stable switching behavior under mechanical stress as performed by substrate bending. Switching characteristics measured under mechanical stress and without stress are matching well. The results demonstrate that the SPE-printed atomic switch has great potential for flexible switch/memory applications.
UR - http://www.scopus.com/inward/record.url?scp=84875446916&partnerID=8YFLogxK
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U2 - 10.1557/opl.2012.1022
DO - 10.1557/opl.2012.1022
M3 - Conference contribution
AN - SCOPUS:84875446916
SN - 9781605114071
T3 - Materials Research Society Symposium Proceedings
SP - 69
EP - 74
BT - Materials and Physics of Emerging Nonvolatile Memories
T2 - 2012 MRS Spring Meeting
Y2 - 9 April 2012 through 13 April 2012
ER -