Flipchip mounted 25.8Gb/s directly modulated InGaAsP DFB laser with Rudoped semiinsulating buried heterostructure

Shigeru Kanazawa; Toshio Ito; Tomonari Sato; Ryuzo Iga; Wataru Kobayashi; Kiyoto Takahata; Hiroaki Sanjoh; Hiroyuki Ishii

doi:10.1587/elex.11.20141028

Flipchip mounted 25.8Gb/s directly modulated InGaAsP DFB laser with Rudoped semiinsulating buried heterostructure

Shigeru Kanazawa^*, Toshio Ito, Tomonari Sato, Ryuzo Iga, Wataru Kobayashi, Kiyoto Takahata, Hiroaki Sanjoh, Hiroyuki Ishii

^*この研究の対応する著者

研究成果: Article › 査読

5 被引用数 (Scopus)

抄録

The first directly modulated InGaAsP DFB laser module using the flip-chip mounting technique was fabricated for 25.8-Gb/s operation. The fabricated laser chip has p- and n-electrodes on the surface side. This structure is suitable for flip-chip mounting, which provides a high modulation bandwidth. The fabricated module provided clear eye opening with a dynamic extinction ratio of over 4 dB when operated 25.8 Gb/s.

本文言語	English
論文番号	20141028
ページ（範囲）	1-4
ページ数	4
ジャーナル	ieice electronics express
巻	12
号	1
DOI	https://doi.org/10.1587/elex.11.20141028
出版ステータス	Published - 2014 12月 19
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学

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10.1587/elex.11.20141028

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abstract = "The first directly modulated InGaAsP DFB laser module using the flip-chip mounting technique was fabricated for 25.8-Gb/s operation. The fabricated laser chip has p- and n-electrodes on the surface side. This structure is suitable for flip-chip mounting, which provides a high modulation bandwidth. The fabricated module provided clear eye opening with a dynamic extinction ratio of over 4 dB when operated 25.8 Gb/s.",

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doi = "10.1587/elex.11.20141028",

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AU - Kanazawa, Shigeru

AU - Ito, Toshio

AU - Sato, Tomonari

AU - Iga, Ryuzo

AU - Kobayashi, Wataru

AU - Takahata, Kiyoto

AU - Sanjoh, Hiroaki

AU - Ishii, Hiroyuki

N1 - Publisher Copyright: © IEICE 2015

PY - 2014/12/19

Y1 - 2014/12/19

N2 - The first directly modulated InGaAsP DFB laser module using the flip-chip mounting technique was fabricated for 25.8-Gb/s operation. The fabricated laser chip has p- and n-electrodes on the surface side. This structure is suitable for flip-chip mounting, which provides a high modulation bandwidth. The fabricated module provided clear eye opening with a dynamic extinction ratio of over 4 dB when operated 25.8 Gb/s.

AB - The first directly modulated InGaAsP DFB laser module using the flip-chip mounting technique was fabricated for 25.8-Gb/s operation. The fabricated laser chip has p- and n-electrodes on the surface side. This structure is suitable for flip-chip mounting, which provides a high modulation bandwidth. The fabricated module provided clear eye opening with a dynamic extinction ratio of over 4 dB when operated 25.8 Gb/s.

KW - 100GbE

KW - DML

KW - Flip-chip

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Flipchip mounted 25.8Gb/s directly modulated InGaAsP DFB laser with Rudoped semiinsulating buried heterostructure

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