Floating body RAM technology and its scalability to 32nm node and beyond

Tomoaki Shino; Naoki Kusunoki; Tomoki Higashi; Takashi Ohsawa; Katsuyuki Fujita; Kosuke Hatsuda; Nobuyuki Ikumi; Fumiyoshi Matsuoka; Yasuyuki Kajitani; Ryo Fukuda; Yoji Watanabe; Yoshihiro Minami; Atsushi Sakamoto; Jun Nishimura; Hiroomi Nakajima; Mutsuo Morikado; Kazumi Inoh; Takeshi Hamamoto; Akihiro Nitayama

doi:10.1109/IEDM.2006.346846

Floating body RAM technology and its scalability to 32nm node and beyond

Tomoaki Shino^*, Naoki Kusunoki, Tomoki Higashi, Takashi Ohsawa, Katsuyuki Fujita, Kosuke Hatsuda, Nobuyuki Ikumi, Fumiyoshi Matsuoka, Yasuyuki Kajitani, Ryo Fukuda, Yoji Watanabe, Yoshihiro Minami, Atsushi Sakamoto, Jun Nishimura, Hiroomi Nakajima, Mutsuo Morikado, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama

^*この研究の対応する著者

研究成果: Conference contribution

31 被引用数 (Scopus)

抄録

Technologies and improved performance of the Floating Body RAM are demonstrated. Reducing SOI thickness to 43nm, a 16Mb chip yield of 68% has been obtained. Device simulation proves that the Floating Body Cell is scalable to the 32nm node keeping signal margin (threshold voltage difference) and data retention time constant.

本文言語	English
ホスト出版物のタイトル	2006 International Electron Devices Meeting Technical Digest, IEDM
DOI	https://doi.org/10.1109/IEDM.2006.346846
出版ステータス	Published - 2006 12月 1
外部発表	はい
イベント	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States 継続期間: 2006 12月 10 → 2006 12月 13

出版物シリーズ

名前	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（印刷版）	0163-1918

Other

Other	2006 International Electron Devices Meeting, IEDM
国/地域	United States
City	San Francisco, CA
Period	06/12/10 → 06/12/13

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

文献へのアクセス

10.1109/IEDM.2006.346846

他のファイルとリンク

引用スタイル

Shino, T., Kusunoki, N., Higashi, T., Ohsawa, T., Fujita, K., Hatsuda, K., Ikumi, N., Matsuoka, F., Kajitani, Y., Fukuda, R., Watanabe, Y., Minami, Y., Sakamoto, A., Nishimura, J., Nakajima, H., Morikado, M., Inoh, K., Hamamoto, T., & Nitayama, A. (2006). Floating body RAM technology and its scalability to 32nm node and beyond. In 2006 International Electron Devices Meeting Technical Digest, IEDM 記事 4154265 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346846

Shino, T, Kusunoki, N, Higashi, T, Ohsawa, T, Fujita, K, Hatsuda, K, Ikumi, N, Matsuoka, F, Kajitani, Y, Fukuda, R, Watanabe, Y, Minami, Y, Sakamoto, A, Nishimura, J, Nakajima, H, Morikado, M, Inoh, K, Hamamoto, T & Nitayama, A 2006, Floating body RAM technology and its scalability to 32nm node and beyond. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154265, Technical Digest - International Electron Devices Meeting, IEDM, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 06/12/10. https://doi.org/10.1109/IEDM.2006.346846

@inproceedings{c7d7f65059294288a1eed9ba574e9538,

title = "Floating body RAM technology and its scalability to 32nm node and beyond",

abstract = "Technologies and improved performance of the Floating Body RAM are demonstrated. Reducing SOI thickness to 43nm, a 16Mb chip yield of 68% has been obtained. Device simulation proves that the Floating Body Cell is scalable to the 32nm node keeping signal margin (threshold voltage difference) and data retention time constant.",

author = "Tomoaki Shino and Naoki Kusunoki and Tomoki Higashi and Takashi Ohsawa and Katsuyuki Fujita and Kosuke Hatsuda and Nobuyuki Ikumi and Fumiyoshi Matsuoka and Yasuyuki Kajitani and Ryo Fukuda and Yoji Watanabe and Yoshihiro Minami and Atsushi Sakamoto and Jun Nishimura and Hiroomi Nakajima and Mutsuo Morikado and Kazumi Inoh and Takeshi Hamamoto and Akihiro Nitayama",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/IEDM.2006.346846",

language = "English",

isbn = "1424404398",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",

note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",

}

TY - GEN

T1 - Floating body RAM technology and its scalability to 32nm node and beyond

AU - Shino, Tomoaki

AU - Kusunoki, Naoki

AU - Higashi, Tomoki

AU - Ohsawa, Takashi

AU - Fujita, Katsuyuki

AU - Hatsuda, Kosuke

AU - Ikumi, Nobuyuki

AU - Matsuoka, Fumiyoshi

AU - Kajitani, Yasuyuki

AU - Fukuda, Ryo

AU - Watanabe, Yoji

AU - Minami, Yoshihiro

AU - Sakamoto, Atsushi

AU - Nishimura, Jun

AU - Nakajima, Hiroomi

AU - Morikado, Mutsuo

AU - Inoh, Kazumi

AU - Hamamoto, Takeshi

AU - Nitayama, Akihiro

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Technologies and improved performance of the Floating Body RAM are demonstrated. Reducing SOI thickness to 43nm, a 16Mb chip yield of 68% has been obtained. Device simulation proves that the Floating Body Cell is scalable to the 32nm node keeping signal margin (threshold voltage difference) and data retention time constant.

AB - Technologies and improved performance of the Floating Body RAM are demonstrated. Reducing SOI thickness to 43nm, a 16Mb chip yield of 68% has been obtained. Device simulation proves that the Floating Body Cell is scalable to the 32nm node keeping signal margin (threshold voltage difference) and data retention time constant.

UR - http://www.scopus.com/inward/record.url?scp=46049102832&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46049102832&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2006.346846

DO - 10.1109/IEDM.2006.346846

M3 - Conference contribution

AN - SCOPUS:46049102832

SN - 1424404398

SN - 9781424404391

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2006 International Electron Devices Meeting Technical Digest, IEDM

T2 - 2006 International Electron Devices Meeting, IEDM

Y2 - 10 December 2006 through 13 December 2006

ER -

Floating body RAM technology and its scalability to 32nm node and beyond

抄録

出版物シリーズ

Other

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル