A novel wet process based on electroless deposition for the fabrication of a diffusion barrier layer for ULSI interconnections is proposed. In this paper, the formation of diffusion barrier layer on low-k substrate using novel wet process was investigated. The fabrication of electroless Nickel-Boron (NiB) layer as a diffusion barrier layer on low-k film using Pd-activated self-assembled monolayer (SAM) as a seed/adhesion layer was attained on low-k film following the dielectric surface modification using ultra-violet (UV) light irradiation. The obtained layer where uniform, had small grain size, and showed good adhesion to low-k materials, both organic and inorganic. We report on the deposition process as well as on the thin film properties.
|出版ステータス||Published - 2004 12月 1|
|イベント||205th ECS Meeting - San Antonio, TX, United States|
継続期間: 2004 5月 9 → 2004 5月 13
|Conference||205th ECS Meeting|
|City||San Antonio, TX|
|Period||04/5/9 → 04/5/13|
ASJC Scopus subject areas