Formation of SiGe and SiGeC layers on Si by Ge and C ion implantation and subsequent ion-beam-induced epitaxial crystallization

Naoto Kobayashi*, Masataka Hasegawa, J. R. Phillips, Nobuyuki Hayashi, Hisao Tanoue, Hajime Shibata, Yunosuke Makita


研究成果: Conference contribution

3 被引用数 (Scopus)


Fabrication of Si1-xGex and Si1-x-yGexCy layers on Si(100) by high-dose ion implantation of 72Ge ions without and with 12C ions and subsequent high-energy and low-energy ion-beam-induced epitaxial crystallization (IBIEC) has been investigated. Structural properties of the surface layers were observed by RBS-channeling technique. Si(100) wafers were implanted with 150keV and 80keV Ge ions at room temperature so as to produce a peak concentration of Ge amounting to approximately 2 and 14 at.%, respectively. C ions were additionally implanted to a fluence of 10% of Ge concentration for the SiGeC samples. IBIEC experiments performed with 400keV 18Ar ion bombardments have induced crystallization of the amorphous layers of SiGe and SiGeC on Si up to the surface at 400°C for both samples with low Ge concentration (2%) and high Ge concentration (14%). IBIEC using 72Ge ions with energies whose projected ranges are within the amorphous layer was alternatively performed for SiGe layer on Si. Bombardments of 140keV and 40keV Ge ions at 400°C have induced crystallization up to the surface with a slight disorder in the grown layer. Present experimental results suggest a novel ion beam synthesis method of fabrication of SiGe (SiGeC) on Si at low temperatures.

ホスト出版物のタイトルMaterials Research Society Symposium Proceedings
編集者Anthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
Place of PublicationPittsburgh, PA, United States
出版社Publ by Materials Research Society
出版ステータスPublished - 1994
イベントProceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
継続期間: 1993 11月 291993 12月 3


OtherProceedings of the MRS 1993 Fall Meeting
CityBoston, MA, USA

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料


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