抄録
The authors present the gate capacitance characteristics of the gate/N/sup -/ overlap LDD (lightly doped drain) transistor. The gate capacitance was directly measured by a four-terminal method, using an LCR meter. The measured results for the overlap LDD were compared with those for the single drain and the LDD structure. It was demonstrated that the gate/drain capacitance for the overlap LDD is smaller than that for the single drain and as small as that for the LDD in spite of the large overlap length between the gate and the N/sup -/ region. This result was also confirmed by simulation, which indicates that the small gate/drain capacitance of the overlap LDD is due to the depletion of the N/sup -/ drain under the gate by the normal electric field from the gate and the lateral electric field at the drain.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | International Electron Devices Meeting 1991, IEDM 1991 |
| 出版社 | Institute of Electrical and Electronics Engineers Inc. |
| ページ | 371-374 |
| ページ数 | 4 |
| 巻 | 1991-January |
| ISBN（電子版） | 0780302435 |
| DOI | |
| 出版ステータス | Published - 1991 |
| 外部発表 | はい |
| イベント | International Electron Devices Meeting, IEDM 1991 - Washington, United States 継続期間: 1991 12月 8 → 1991 12月 11 |
Other
| Other | International Electron Devices Meeting, IEDM 1991 |
|---|---|
| 国/地域 | United States |
| City | Washington |
| Period | 91/12/8 → 91/12/11 |
ASJC Scopus subject areas
- 電子工学および電気工学
- 凝縮系物理学
- 電子材料、光学材料、および磁性材料
- 材料化学