TY - JOUR
T1 - Growth of diamond films at low pressure using magneto-microwave plasma CVD
AU - Wei, Jin
AU - Kawarada, Hiroshi
AU - Suzuki, Jun ichi
AU - Hiraki, Akio
PY - 1990
Y1 - 1990
N2 - Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1 x 1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures ( -580 °C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4 + CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.
AB - Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1 x 1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures ( -580 °C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4 + CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.
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U2 - 10.1016/S0022-0248(08)80108-X
DO - 10.1016/S0022-0248(08)80108-X
M3 - Article
AN - SCOPUS:0025235536
SN - 0022-0248
VL - 99
SP - 1201
EP - 1205
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -