Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide

J. Senzaki*, K. Fukuda, Y. Ishida, Y. Tanaka, H. Tanoue, Naoto Kobayashi, T. Tanaka, K. Arai


研究成果: Conference contribution


The arsenic dose dependence of electrical properties for implanted samples at 500°C and subsequently annealed at 1600°C for 30min has been investigated to derivate the activation energies of the arsenic donors in silicon carbide. Hall effect measurements were performed between 20K and 773K. Hall carrier concentration of implanted sample with high dose of 7×10 15 cm -2 is independence of temperature, which indicates the formation of implanted layer with metallic conduction. For the sample with low dose of 1×10 14 cm -2, the experimental Hall mobility varies directly as T 3/2 below 80K and as T -3/2 above 150K. The activation energies of arsenic donors determined from the implanted sample with low dose using a least-squares fit of the charge neutrality equation are 66.8 meV for hexagonal site and 127.0 meV for cubic site, respectively.

ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
編集者R.J. Shul, F. Ren, W. Pletschen, M. Murakami
出版ステータスPublished - 2000
イベントWide-Bandgap Electronic Devices - San Francisco, CA, United States
継続期間: 2000 4月 242000 4月 27


OtherWide-Bandgap Electronic Devices
国/地域United States
CitySan Francisco, CA

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料


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