TY - JOUR
T1 - Hall effect of quasi-hole gas in organic single-crystal transistors
AU - Takeya, Jun
AU - Tsukagoshi, Kazuhito
AU - Aoyagi, Yoshinobu
AU - Takenobu, Taishi
AU - Iwasa, Yoshihiro
PY - 2005/11/25
Y1 - 2005/11/25
N2 - Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.
AB - Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.
KW - Hall effect
KW - OFET
KW - Organic field-effect transistor
KW - Rubrene
KW - Single-crystal FET
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U2 - 10.1143/JJAP.44.L1393
DO - 10.1143/JJAP.44.L1393
M3 - Article
AN - SCOPUS:31144462939
SN - 0021-4922
VL - 44
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 46-49
ER -