Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers

T. Nozaki; M. Iwamoto; K. Usami; K. Mukai; A. Hiraiwa

doi:10.1007/BF02521296

Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers

T. Nozaki^*, M. Iwamoto, K. Usami, K. Mukai, A. Hiraiwa

^*この研究の対応する著者

研究成果: Article › 査読

1 被引用数 (Scopus)

抄録

Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the¹⁶O(³He, p)¹⁸F reaction. By³He bombardment of samples propertly arranged under consideration of the¹⁸F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm² of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis.

本文言語	English
ページ（範囲）	449-459
ページ数	11
ジャーナル	Journal of Radioanalytical Chemistry
巻	52
号	2
DOI	https://doi.org/10.1007/BF02521296
出版ステータス	Published - 1979 9月
外部発表	はい

ASJC Scopus subject areas

放射線学、核医学およびイメージング
分子医療

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10.1007/BF02521296

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title = "Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers",

abstract = "Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the16O(3He, p)18F reaction. By3He bombardment of samples propertly arranged under consideration of the18F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm2 of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis.",

author = "T. Nozaki and M. Iwamoto and K. Usami and K. Mukai and A. Hiraiwa",

year = "1979",

month = sep,

doi = "10.1007/BF02521296",

language = "English",

volume = "52",

pages = "449--459",

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T1 - Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers

AU - Nozaki, T.

AU - Iwamoto, M.

AU - Usami, K.

AU - Mukai, K.

AU - Hiraiwa, A.

PY - 1979/9

Y1 - 1979/9

N2 - Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the16O(3He, p)18F reaction. By3He bombardment of samples propertly arranged under consideration of the18F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm2 of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis.

AB - Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the16O(3He, p)18F reaction. By3He bombardment of samples propertly arranged under consideration of the18F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm2 of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis.

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JO - Journal of Radioanalytical and Nuclear Chemistry

JF - Journal of Radioanalytical and Nuclear Chemistry

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Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers

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