TY - JOUR
T1 - Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe
AU - Kobayashi, M.
AU - Tosaka, H.
AU - Nagatake, T.
AU - Yoshida, T.
AU - Yoshikawa, A.
N1 - Funding Information:
This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Areas, New Functionality Materials - Design, Preparation and Control, from the Ministry of Education, Science and Culture, and partly supported by a Research Promotion Fund in the field of Interna-
PY - 1994/4/2
Y1 - 1994/4/2
N2 - Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.
AB - Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.
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U2 - 10.1016/0022-0248(94)90900-8
DO - 10.1016/0022-0248(94)90900-8
M3 - Article
AN - SCOPUS:0028760722
SN - 0022-0248
VL - 138
SP - 745
EP - 749
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -