The exceptional performance of diamond-based field-effect transistor technology is not restricted to devices that use single crystalline diamond alone. This letter explores the full potential of the heteroepitaxial diamond field-effect transistor (HED-FET). HED-FET devices were fabricated with a long gate-drain length ( LGD) configuration using C-H bonded channels, and a high maximum current density of 80 mA/mm and a high I ON/I OFF ratio of 109 were achieved. Additionally, the HED-FETs showed an average breakdown voltage of ≥500 V and comparatively high breakdown voltage of more than 1 kV. This letter represents a significant step toward the realization of the potential of widely available heteroepitaxial diamond for use in FET applications.
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