p-InGaNn-GaN vertical conducting diodes were grown on freestanding n-GaN substrates by metal organic vapor phase epitaxy. The homoepitaxial growth produced a high-quality GaN layer, as evidenced by the full width at half maximum of the (0002) x-ray rocking curve is as low as 34 arc sec. For a diode with a 3.6-μm -thick n-GaN layer, a high breakdown voltage (VB) of 571 V is obtained with a low on-state resistance (Ron) of 1.23 m cm2, leading to the figure of merit, (VB) 2 Ron, of 265 MW cm2. This is the highest value among those previously reported for GaN-based vertical conducting Schottky and p-n junction diodes.
|ジャーナル||Applied Physics Letters|
|出版ステータス||Published - 2006 10月 20|
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