TY - GEN
T1 - High efficiency compact Doherty power amplifier with novel harmonics termination for handset applications
AU - Sugiura, Tsuyoshi
AU - Furuta, Satoshi
AU - Murakami, Tadamasa
AU - Tanji, Koki
AU - Otani, Norihisa
AU - Yoshimasu, Toshihiko
N1 - Funding Information:
We would like to thank Samsung Electro-Mechanics Dr. Younsuk Kim, Mr. Cho Hoyun, Mr. Shinichi Iizuka, and VP Dr. Yoon Jangsup for their great support.
Publisher Copyright:
© 2018 IEICE
PY - 2019/1/16
Y1 - 2019/1/16
N2 - This paper presents a high efficiency compact Doherty power amplifier (PA) with a novel harmonics termination for handset applications using a GaAs/InGaP heterojunction bipolar transistor (HBT) process. The novel harmonic termination circuit effectively reduces the insertion loss of the matching circuit with compact size. The Doherty PA adopts a lumped-element transformer which consists of metal insulator metal (MIM) capacitors on Silicon substrate, a bonding-wire inductor and short micro-strip lines on printed circuit board (PCB). The fabricated PA has exhibited an average output power of 25.5 dBm and a power added efficiency (PAE) as high as 50.1% under a 10MHz band width quadrature phase shift keying (QPSK) 6.16 dB peak-to-average-power-ratio (PAPR) LTE signal. The IC die size is 1mm by 1mm. The input and output Doherty transformer areas are 0.5 mm by 1.0 mm and 0.7 mm by 0.7 mm, respectively.
AB - This paper presents a high efficiency compact Doherty power amplifier (PA) with a novel harmonics termination for handset applications using a GaAs/InGaP heterojunction bipolar transistor (HBT) process. The novel harmonic termination circuit effectively reduces the insertion loss of the matching circuit with compact size. The Doherty PA adopts a lumped-element transformer which consists of metal insulator metal (MIM) capacitors on Silicon substrate, a bonding-wire inductor and short micro-strip lines on printed circuit board (PCB). The fabricated PA has exhibited an average output power of 25.5 dBm and a power added efficiency (PAE) as high as 50.1% under a 10MHz band width quadrature phase shift keying (QPSK) 6.16 dB peak-to-average-power-ratio (PAPR) LTE signal. The IC die size is 1mm by 1mm. The input and output Doherty transformer areas are 0.5 mm by 1.0 mm and 0.7 mm by 0.7 mm, respectively.
KW - Heterojunction bipolar transistor
KW - Mobile communication
KW - Power amplifier
UR - http://www.scopus.com/inward/record.url?scp=85061774187&partnerID=8YFLogxK
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U2 - 10.23919/APMC.2018.8617511
DO - 10.23919/APMC.2018.8617511
M3 - Conference contribution
AN - SCOPUS:85061774187
T3 - Asia-Pacific Microwave Conference Proceedings, APMC
SP - 455
EP - 457
BT - 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 30th Asia-Pacific Microwave Conference, APMC 2018
Y2 - 6 November 2018 through 9 November 2018
ER -