TY - GEN
T1 - High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs
T2 - formation of new shallow emission bands
AU - Harada, K.
AU - Makita, Y.
AU - Shibata, H.
AU - Lo, B.
AU - Beye, A. C.
AU - Halsall, M. P.
AU - Kimura, S.
AU - Kobayashi, Naoto
AU - Iida, T.
AU - Shima, T.
AU - Obara, A.
PY - 1996
Y1 - 1996
N2 - Hg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg
+ into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called 'g' line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations |N
A-N
D| greater than 2×10
17 cm
-3. This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.
AB - Hg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg
+ into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called 'g' line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations |N
A-N
D| greater than 2×10
17 cm
-3. This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.
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M3 - Conference contribution
AN - SCOPUS:0029705618
VL - 396
SP - 835
EP - 840
BT - Materials Research Society Symposium - Proceedings
PB - Materials Research Society
ER -