High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. The fT of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.
|出版ステータス||Published - 2001 1月 1|
|イベント||13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan|
継続期間: 2001 6月 4 → 2001 6月 7
|Conference||13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)|
|Period||01/6/4 → 01/6/7|
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