TY - GEN
T1 - High Linearity and High Efficiency Stacked-FET Millimeter-Wave Power Amplifier ICs
AU - Yoshimasu, Toshihiko
AU - Fang, Mengchu
AU - Sugiura, Tsuyoshi
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/9
Y1 - 2020/9
N2 - Recently reported CMOS power amplifier ICs for microwave and millimeter-wave communication systems such as 5G are summarized and reviewed in this paper. Stacked-FETs are widely utilized to increase the output power and to conquer low breakdown voltage issues. In addition, adaptive bias and load circuits are fully described to improve the linearity and back-off efficiency of the power amplifier ICs in this paper.
AB - Recently reported CMOS power amplifier ICs for microwave and millimeter-wave communication systems such as 5G are summarized and reviewed in this paper. Stacked-FETs are widely utilized to increase the output power and to conquer low breakdown voltage issues. In addition, adaptive bias and load circuits are fully described to improve the linearity and back-off efficiency of the power amplifier ICs in this paper.
KW - 5G
KW - CMOS
KW - adaptive bias circuit
KW - back-off efficiency
KW - linear power amplifier
KW - stacked-FET
UR - http://www.scopus.com/inward/record.url?scp=85096539736&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85096539736&partnerID=8YFLogxK
U2 - 10.1109/RFIT49453.2020.9226212
DO - 10.1109/RFIT49453.2020.9226212
M3 - Conference contribution
AN - SCOPUS:85096539736
T3 - 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
SP - 172
EP - 174
BT - 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
Y2 - 2 September 2020 through 4 September 2020
ER -