High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2 semiconducting barrier with a low resistance-area product

Koki Mukaiyama; Shinya Kasai; Yukiko K. Takahashi; Kouta Kondou; Yoshichika Otani; Seiji Mitani; Kazuhiro Hono

doi:10.7567/APEX.10.013008

High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2 semiconducting barrier with a low resistance-area product

Koki Mukaiyama, Shinya Kasai, Yukiko K. Takahashi, Kouta Kondou, Yoshichika Otani, Seiji Mitani, Kazuhiro Hono

研究成果: Article › 査読

8 被引用数 (Scopus)

抄録

Magnetoresistance (MR) and its bias-voltage dependence were investigated in magnetic tunnel junctions (MTJs) with a 2-nm-thick Cu(In0.8Ga0.2)Se2 semiconducting barrier. A relatively high MR ratio of 47% was observed with a low resistance-area product RA of 0.14 ωμm2 at 300 K. By increasing the bias voltage, a high output voltage (as high as 24 mV) was achieved; this value is significantly higher than those ever reported for MR devices with RA values less than 0.5ωμm2. These MR performance characteristics of the MTJs with Cu(In0.8Ga0.2)Se2 are suitable for high-sensitivity read head sensors for hard disk drives with a recording density higher than 2 Tbit/in.2.

本文言語	English
論文番号	013008
ジャーナル	Applied Physics Express
巻	10
号	1
DOI	https://doi.org/10.7567/APEX.10.013008
出版ステータス	Published - 2017 1月
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.7567/APEX.10.013008

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引用スタイル

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title = "High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2 semiconducting barrier with a low resistance-area product",

abstract = "Magnetoresistance (MR) and its bias-voltage dependence were investigated in magnetic tunnel junctions (MTJs) with a 2-nm-thick Cu(In0.8Ga0.2)Se2 semiconducting barrier. A relatively high MR ratio of 47% was observed with a low resistance-area product RA of 0.14 ωμm2 at 300 K. By increasing the bias voltage, a high output voltage (as high as 24 mV) was achieved; this value is significantly higher than those ever reported for MR devices with RA values less than 0.5ωμm2. These MR performance characteristics of the MTJs with Cu(In0.8Ga0.2)Se2 are suitable for high-sensitivity read head sensors for hard disk drives with a recording density higher than 2 Tbit/in.2.",

author = "Koki Mukaiyama and Shinya Kasai and Takahashi, {Yukiko K.} and Kouta Kondou and Yoshichika Otani and Seiji Mitani and Kazuhiro Hono",

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AU - Mukaiyama, Koki

AU - Kasai, Shinya

AU - Takahashi, Yukiko K.

AU - Kondou, Kouta

AU - Otani, Yoshichika

AU - Mitani, Seiji

AU - Hono, Kazuhiro

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