High-performance p-channel diamond MOSFETs with alumina gate insulator

Kazuyuki Hirama; Hidenori Takayanagi; Shintaro Yamauchi; Yoshikatsu Jingu; Hitoshi Umezawa; Hiroshi Kawarada

doi:10.1109/IEDM.2007.4419088

High-performance p-channel diamond MOSFETs with alumina gate insulator

Kazuyuki Hirama^*, Hidenori Takayanagi, Shintaro Yamauchi, Yoshikatsu Jingu, Hitoshi Umezawa, Hiroshi Kawarada

^*この研究の対応する著者

基幹理工学部

研究成果: Conference article › 査読

52 被引用数 (Scopus)

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We evaluated diamond metal oxide semiconductor field effect transistors (MOSFETs) on (001) homoepitaxial and (110) preferentially oriented large-grain diamond films with an A1₂O₃ gate insulator and demonstrated their improved DC and RF characteristics (I_DS= -790 mA/mm and f_T= 45 GHz, which are the highest values for diamond FETs). Channel mobility evaluation and load-pull measurement were carried out for the first time for diamond MOSFETs. Even on a large-grain diamond substrate, a high channel mobility of 120 cm²/Vs was obtained. This is comparable to that of a SiC inversion layer. A power density of 2.14 W/mm was obtained at 1 GHz. This power density exceeded those of Si LDMOSFETs and GaAs FETs.

本文言語	English
論文番号	4419088
ページ（範囲）	873-876
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting, IEDM
DOI	https://doi.org/10.1109/IEDM.2007.4419088
出版ステータス	Published - 2007 12月 1
イベント	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States 継続期間: 2007 12月 10 → 2007 12月 12

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

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10.1109/IEDM.2007.4419088

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title = "High-performance p-channel diamond MOSFETs with alumina gate insulator",

abstract = "We evaluated diamond metal oxide semiconductor field effect transistors (MOSFETs) on (001) homoepitaxial and (110) preferentially oriented large-grain diamond films with an A12O3 gate insulator and demonstrated their improved DC and RF characteristics (IDS= -790 mA/mm and fT= 45 GHz, which are the highest values for diamond FETs). Channel mobility evaluation and load-pull measurement were carried out for the first time for diamond MOSFETs. Even on a large-grain diamond substrate, a high channel mobility of 120 cm2/Vs was obtained. This is comparable to that of a SiC inversion layer. A power density of 2.14 W/mm was obtained at 1 GHz. This power density exceeded those of Si LDMOSFETs and GaAs FETs.",

author = "Kazuyuki Hirama and Hidenori Takayanagi and Shintaro Yamauchi and Yoshikatsu Jingu and Hitoshi Umezawa and Hiroshi Kawarada",

year = "2007",

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doi = "10.1109/IEDM.2007.4419088",

language = "English",

pages = "873--876",

journal = "Technical Digest - International Electron Devices Meeting",

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note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

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T1 - High-performance p-channel diamond MOSFETs with alumina gate insulator

AU - Hirama, Kazuyuki

AU - Takayanagi, Hidenori

AU - Yamauchi, Shintaro

AU - Jingu, Yoshikatsu

AU - Umezawa, Hitoshi

AU - Kawarada, Hiroshi

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We evaluated diamond metal oxide semiconductor field effect transistors (MOSFETs) on (001) homoepitaxial and (110) preferentially oriented large-grain diamond films with an A12O3 gate insulator and demonstrated their improved DC and RF characteristics (IDS= -790 mA/mm and fT= 45 GHz, which are the highest values for diamond FETs). Channel mobility evaluation and load-pull measurement were carried out for the first time for diamond MOSFETs. Even on a large-grain diamond substrate, a high channel mobility of 120 cm2/Vs was obtained. This is comparable to that of a SiC inversion layer. A power density of 2.14 W/mm was obtained at 1 GHz. This power density exceeded those of Si LDMOSFETs and GaAs FETs.

AB - We evaluated diamond metal oxide semiconductor field effect transistors (MOSFETs) on (001) homoepitaxial and (110) preferentially oriented large-grain diamond films with an A12O3 gate insulator and demonstrated their improved DC and RF characteristics (IDS= -790 mA/mm and fT= 45 GHz, which are the highest values for diamond FETs). Channel mobility evaluation and load-pull measurement were carried out for the first time for diamond MOSFETs. Even on a large-grain diamond substrate, a high channel mobility of 120 cm2/Vs was obtained. This is comparable to that of a SiC inversion layer. A power density of 2.14 W/mm was obtained at 1 GHz. This power density exceeded those of Si LDMOSFETs and GaAs FETs.

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SP - 873

EP - 876

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

M1 - 4419088

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

High-performance p-channel diamond MOSFETs with alumina gate insulator

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