High-performance surface-channel diamond field-effect transistors

Hitoshi Umezawa; Hirotada Taniuchi; Takuya Arima; Minoru Tachiki; Hideyo Okushi; Hiroshi Kawarada

High-performance surface-channel diamond field-effect transistors

Hitoshi Umezawa, Hirotada Taniuchi, Takuya Arima, Minoru Tachiki, Hideyo Okushi, Hiroshi Kawarada

基幹理工学部

研究成果: Conference article › 査読

1 被引用数 (Scopus)

抄録

High transconductance and high channel mobility diamond field-effect transistors (FETs) utilizing self-aligned gate FET fabrication process have been operated. The 2 μm gate metal-semiconductor (MES) FET shows the high frequency operation for the first time. The obtained cut off frequency f_T and maximum frequency of oscillation f_max are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of f_T and 30 GHz of f_max.

本文言語	English
ページ（範囲）	815-818
ページ数	4
ジャーナル	Materials Science Forum
巻	353-356
出版ステータス	Published - 2001 3月 14

ASJC Scopus subject areas

材料科学一般
凝縮系物理学
材料力学
機械工学

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引用スタイル

@article{6fe4af53211a48dcacbaa3fa6a13446a,

title = "High-performance surface-channel diamond field-effect transistors",

abstract = "High transconductance and high channel mobility diamond field-effect transistors (FETs) utilizing self-aligned gate FET fabrication process have been operated. The 2 μm gate metal-semiconductor (MES) FET shows the high frequency operation for the first time. The obtained cut off frequency fT and maximum frequency of oscillation fmax are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of fT and 30 GHz of fmax.",

author = "Hitoshi Umezawa and Hirotada Taniuchi and Takuya Arima and Minoru Tachiki and Hideyo Okushi and Hiroshi Kawarada",

year = "2001",

month = mar,

day = "14",

language = "English",

volume = "353-356",

pages = "815--818",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

}

TY - JOUR

T1 - High-performance surface-channel diamond field-effect transistors

AU - Umezawa, Hitoshi

AU - Taniuchi, Hirotada

AU - Arima, Takuya

AU - Tachiki, Minoru

AU - Okushi, Hideyo

AU - Kawarada, Hiroshi

PY - 2001/3/14

Y1 - 2001/3/14

N2 - High transconductance and high channel mobility diamond field-effect transistors (FETs) utilizing self-aligned gate FET fabrication process have been operated. The 2 μm gate metal-semiconductor (MES) FET shows the high frequency operation for the first time. The obtained cut off frequency fT and maximum frequency of oscillation fmax are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of fT and 30 GHz of fmax.

AB - High transconductance and high channel mobility diamond field-effect transistors (FETs) utilizing self-aligned gate FET fabrication process have been operated. The 2 μm gate metal-semiconductor (MES) FET shows the high frequency operation for the first time. The obtained cut off frequency fT and maximum frequency of oscillation fmax are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of fT and 30 GHz of fmax.

UR - http://www.scopus.com/inward/record.url?scp=14344279689&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=14344279689&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:14344279689

SN - 0255-5476

VL - 353-356

SP - 815

EP - 818

JO - Materials Science Forum

JF - Materials Science Forum

ER -

High-performance surface-channel diamond field-effect transistors

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ASJC Scopus subject areas

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