High-Power 780 Nm Algaas Quantum-Well Lasers and Their Reliable Operation

Shigeo Yamashita; Shin ichi Nakatsuka; Kenji Uchida; Toshihiro Kawano; Takashi Kajimura

doi:10.1109/3.89975

High-Power 780 Nm Algaas Quantum-Well Lasers and Their Reliable Operation

Shigeo Yamashita, Shin ichi Nakatsuka, Kenji Uchida, Toshihiro Kawano, Takashi Kajimura

研究成果: Article › 査読

15 被引用数 (Scopus)

抄録

A high-power laser in the 780 nm wavelength region has been realized by introducing an AlGaAs ternary alloy quantum-well structure. Investigations focus on the characteristic temperature and catastrophic optical damage (COD) level. It is found that a triple quantum-well (TQW) active layer structure has superior characteristics for high-power operation. Stable operation for over 1000 h under 50°C and 60 mW conditions is achieved. a relatively high characteristic temperature of around 150 K is also obtained.

本文言語	English
ページ（範囲）	1544-1549
ページ数	6
ジャーナル	IEEE Journal of Quantum Electronics
巻	27
号	6
DOI	https://doi.org/10.1109/3.89975
出版ステータス	Published - 1991 1月 1
外部発表	はい

ASJC Scopus subject areas

原子分子物理学および光学
凝縮系物理学
電子工学および電気工学

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High-Power 780 Nm Algaas Quantum-Well Lasers and Their Reliable Operation

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