抄録
The high-power characteristics of GaN/InGaN double heterojunction bipolar transistors (HBT) were investigated. It was observed that the maximum collector current was not limited by the thermal effect but by the Kirk effect. It was also observed that the maximum collecter current is proportional to the emitter size. It was found that the breakdown voltage of base-collecter diode exceeded 50 V due to the wide band gap of the n-GaN collector.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1964-1966 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 84 |
| 号 | 11 |
| DOI | |
| 出版ステータス | Published - 2004 3月 15 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（その他）