抄録
High-temperature, long-term life tests of GaInAs/Inp heterostructure avalanche photodiodes have been carried out to establish criteria for high reliability photodetectors in 1.55 μm-wavelength optical submarine cable systems. A failure rate of less than 0.2 FIT at 10°C was predicted with an activation energy of 0.7 ev.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1013-1014 |
| ページ数 | 2 |
| ジャーナル | Electronics Letters |
| 巻 | 24 |
| 号 | 16 |
| 出版ステータス | Published - 1988 8月 4 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学