抄録
We describe recent progress on the use of Schottky CdTe diode detectors for spectrometry. The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with previous CdTe detectors. For a relatively thin detector of 0.5-1 mm thickness, the high bias voltage results in a high electric field in the device. Both the improved charge-collection efficiency and the low-leakage current lead to an energy resolution of better than 600 eV full-width at half-maximum at 60 keV for a 2 × 2 mm2 device without any charge-loss correction electronics. Large-area detectors with dimensions of 21 × 21 mm2 are now available with an energy resolution of ∼ 2.8 keV. Long-term stability can be easily attained for relatively thin (< 1 mm) detectors if they are cooled or operated under a high bias voltage.
本文言語 | English |
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ページ(範囲) | 1297-1303 |
ページ数 | 7 |
ジャーナル | IEEE Transactions on Nuclear Science |
巻 | 49 II |
号 | 3 |
DOI | |
出版ステータス | Published - 2002 6月 |
ASJC Scopus subject areas
- 電子工学および電気工学
- 原子力エネルギーおよび原子力工学