Cubic GaN (c-GaN) layers were grown by rf-plasma source MBE on (001) GaAs prepared by atomic-hydrogen treatment at `high temperatures', and the structural properties of the epilayers were investigated by the high-resolution X-ray rocking curve and the reciprocal space mapping measurements. The growth temperature was varied from 620 to 740 °C. It was found that single domain `device-quality' c-GaN layers could be grown for the first time; the FWHM of the X-ray rocking curves for the (002) c-GaN could be as small as 70-90 arcsec and the inclusion of h-GaN phase in the c-GaN epilayers grown at temperatures above 680 °C could be less than 4×103.
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||Published - 1997 1月 1|
|イベント||Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA|
継続期間: 1997 12月 1 → 1997 12月 4
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