抄録
Cubic GaN (c-GaN) layers were grown by rf-plasma source MBE on (001) GaAs prepared by atomic-hydrogen treatment at `high temperatures', and the structural properties of the epilayers were investigated by the high-resolution X-ray rocking curve and the reciprocal space mapping measurements. The growth temperature was varied from 620 to 740 °C. It was found that single domain `device-quality' c-GaN layers could be grown for the first time; the FWHM of the X-ray rocking curves for the (002) c-GaN could be as small as 70-90 arcsec and the inclusion of h-GaN phase in the c-GaN epilayers grown at temperatures above 680 °C could be less than 4×103.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 465-470 |
| ページ数 | 6 |
| ジャーナル | Materials Research Society Symposium - Proceedings |
| 巻 | 482 |
| DOI | |
| 出版ステータス | Published - 1997 1月 1 |
| 外部発表 | はい |
| イベント | Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA 継続期間: 1997 12月 1 → 1997 12月 4 |
ASJC Scopus subject areas
- 材料科学（全般）
- 凝縮系物理学
- 材料力学
- 機械工学