抄録
A planar-type InGaAs/InP-heterostructure APD with an InGaAsP buffer layer was made by using a VPE technique. To avoid the edge breakdown, a guard-ring structure was employed. The average received optical power for a 10** minus **9 error rate at 280 Mbit/s was as low as minus 43 dbm, which corresponded to 2 and 7 db improvements over a Ge-APD at 1. 52 and 1. 59 mu m, respectively.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 235-236 |
| ページ数 | 2 |
| ジャーナル | Electronics Letters |
| 巻 | 20 |
| 号 | 6 |
| 出版ステータス | Published - 1984 1月 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学