High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

M. Aoki*, M. Suzuki, M. Takahashi, H. Sano, T. Ido, T. Kawano, A. Takai

*この研究の対応する著者

研究成果: Article査読

56 被引用数 (Scopus)

抄録

An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5·4 mA and a modulation efficiency as high as 13dB/2V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1·55 µm.

本文言語English
ページ(範囲)1157-1158
ページ数2
ジャーナルElectronics Letters
28
12
DOI
出版ステータスPublished - 1992 6月 4
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学

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