TY - JOUR
T1 - High-speed electroluminescence from semiconducting carbon nanotube films
AU - Takahashi, Hidenori
AU - Suzuki, Yuji
AU - Yoshida, Norito
AU - Nakagawa, Kenta
AU - Maki, Hideyuki
N1 - Funding Information:
This work was partially supported by PRESTO (Grant No. JPMJPR152B) from JST, a project of Kanagawa Institute of Industrial Science and Technology (KISTEC), KAKENHI (Grant Nos. 16H04355, 23686055, and 18K19025) and the Core-to-Core program from JSPS, the Spintronics Research Network of Japan, and the NIMS Nanofabrication Platform in Nanotechnology Platform Project by MEXT.
Publisher Copyright:
© 2020 Author(s).
PY - 2020/4/30
Y1 - 2020/4/30
N2 - High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with the silicon-based platforms because of the difficulty of their direct growth on a silicon substrate. Here, we report high-speed, ultra-small-size on-chip electroluminescence (EL) emitters based on semiconducting single-walled carbon nanotube (SWNT) thin films. The peaks of the EL emission spectra are about 0.15-eV redshifted from the peaks of the absorption and photoluminescence emission spectra, which probably suggest emission from trions. High-speed responses of ∼100 ps were experimentally observed from the EL emitters, which indicate the possibility of several-GHz modulation. The pulsed light generation was also obtained by applying the pulse voltage. These high-speed and ultra-small-size EL emitters can enable novel on-chip optoelectronic devices for highly integrated optoelectronics and silicon photonics.
AB - High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with the silicon-based platforms because of the difficulty of their direct growth on a silicon substrate. Here, we report high-speed, ultra-small-size on-chip electroluminescence (EL) emitters based on semiconducting single-walled carbon nanotube (SWNT) thin films. The peaks of the EL emission spectra are about 0.15-eV redshifted from the peaks of the absorption and photoluminescence emission spectra, which probably suggest emission from trions. High-speed responses of ∼100 ps were experimentally observed from the EL emitters, which indicate the possibility of several-GHz modulation. The pulsed light generation was also obtained by applying the pulse voltage. These high-speed and ultra-small-size EL emitters can enable novel on-chip optoelectronic devices for highly integrated optoelectronics and silicon photonics.
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U2 - 10.1063/5.0002092
DO - 10.1063/5.0002092
M3 - Article
AN - SCOPUS:85097347780
SN - 0021-8979
VL - 127
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 16
M1 - 164301
ER -