An advanced nitrogen implantation technique is proposed. New technique can remarkably suppress the hot carrier degradation. Since the generation of interface states can be reduced by the incorporation of nitrogen at the interface between a substrate and SiO2 spacers. Moreover, the ultra shallow junction without the increase in leakage current can be formed by nitrogen implantation into the source/drain. Since the secondary defects induced by nitrogen implantation can act as a surface proximity gettering (SPG) site.
|Digest of Technical Papers - Symposium on VLSI Technology
|Published - 1995
|Proceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
継続期間: 1995 6月 6 → 1995 6月 8
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