A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimizing its structure with a 0·8 μm thick p-cladding layer, a 1200 μm long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 °C was confirmed for more than 1200 h. Optical feedback noise was below 3×10-14 Hz-1.
|出版ステータス||Published - 1993 1月 1|
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