Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode

A. Tajiri; K. Minakuchi; K. Komeda; Y. Bessho; Y. Inoue; K. Yodoshi; T. Yamaguchi

Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode

A. Tajiri^*, K. Minakuchi, K. Komeda, Y. Bessho, Y. Inoue, K. Yodoshi, T. Yamaguchi

^*この研究の対応する著者

研究成果: Article › 査読

4 被引用数 (Scopus)

抄録

A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimizing its structure with a 0·8 μm thick p-cladding layer, a 1200 μm long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 °C was confirmed for more than 1200 h. Optical feedback noise was below 3×10^-14 Hz^-1.

本文言語	English
ページ（範囲）	369-370
ページ数	2
ジャーナル	Electronics Letters
巻	29
号	4
出版ステータス	Published - 1993 1月 1
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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abstract = "A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimizing its structure with a 0·8 μm thick p-cladding layer, a 1200 μm long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 °C was confirmed for more than 1200 h. Optical feedback noise was below 3×10-14 Hz-1.",

author = "A. Tajiri and K. Minakuchi and K. Komeda and Y. Bessho and Y. Inoue and K. Yodoshi and T. Yamaguchi",

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T1 - Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode

AU - Tajiri, A.

AU - Minakuchi, K.

AU - Komeda, K.

AU - Bessho, Y.

AU - Inoue, Y.

AU - Yodoshi, K.

AU - Yamaguchi, T.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimizing its structure with a 0·8 μm thick p-cladding layer, a 1200 μm long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 °C was confirmed for more than 1200 h. Optical feedback noise was below 3×10-14 Hz-1.

AB - A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimizing its structure with a 0·8 μm thick p-cladding layer, a 1200 μm long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 °C was confirmed for more than 1200 h. Optical feedback noise was below 3×10-14 Hz-1.

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M3 - Article

AN - SCOPUS:0027545774

SN - 0013-5194

VL - 29

SP - 369

EP - 370

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode

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