HIGHLY RELIABLE N-MOS PROCESS FOR ONE MEGABIT DYNAMIC RANDOM ACCESS MEMORY.

Physics & Astronomy

• random access memory 95%
• birds 53%
• isolation 39%
• capacitors 35%
• etching 31%
• wafers 30%
• electrical resistivity 25%
• electrodes 25%
• cells 22%
• ions 19%

Engineering & Materials Science

• Epitaxial growth 57%
• Reactive ion etching 55%
• Data storage equipment 50%
• Birds 47%
• Capacitors 32%
• Electrodes 31%
• Temperature 16%

Chemical Compounds

• Capacitor 84%
• Etching 74%
• Behavior as Electrode 41%
• Ion 32%