TY - JOUR
T1 - Hydrogen-terminated diamond surfaces and interfaces
AU - Kawarada, Hiroshi
PY - 1996/12
Y1 - 1996/12
N2 - Surfaces and interfaces of hydrogen-terminated diamonds are reviewed. The control and preparation of diamond surfaces have been greatly advanced by the recent progress in epitaxial growth, which is discussed in Section 2. In Section 3, the hydrogen-terminated surfaces of (111) and (001) are explained in terms of types of hydrides, surface reconstructions, stability of surface C-H bonds, and surface p-type conduction. In Section 4, metal/diamond contacts are reviewed. Schottky and ohmic properties are discussed on the basis of hydrogen termination, surface treatment, metal electronegativity, interfacial reaction, and surface states. The first application of hydrogen-terminated surfaces as electron devices is presented for the metal-semiconductor field effect transistor.
AB - Surfaces and interfaces of hydrogen-terminated diamonds are reviewed. The control and preparation of diamond surfaces have been greatly advanced by the recent progress in epitaxial growth, which is discussed in Section 2. In Section 3, the hydrogen-terminated surfaces of (111) and (001) are explained in terms of types of hydrides, surface reconstructions, stability of surface C-H bonds, and surface p-type conduction. In Section 4, metal/diamond contacts are reviewed. Schottky and ohmic properties are discussed on the basis of hydrogen termination, surface treatment, metal electronegativity, interfacial reaction, and surface states. The first application of hydrogen-terminated surfaces as electron devices is presented for the metal-semiconductor field effect transistor.
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U2 - 10.1016/S0167-5729(97)80002-7
DO - 10.1016/S0167-5729(97)80002-7
M3 - Review article
AN - SCOPUS:0030395822
SN - 0167-5729
VL - 26
SP - 205
EP - 206
JO - Surface Science Reports
JF - Surface Science Reports
IS - 7
ER -