Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate
Masafumi Inaba, Tsubasa Muta, Mikinori Kobayashi, Toshiki Saito, Masanobu Shibata, Daisuke Matsumura, Takuya Kudo, Atsushi Hiraiwa, Hiroshi Kawarada
研究成果: Article › 査読
37
被引用数
(Scopus)