抄録
The occupation sites of Dy- or Y-substituted PZT films were identified using Raman spectroscopy, and the correlation between the occupation site and ferroelectric property was investigated. When Dy or Y was less than 2%, the ferroelectric properties improved because substitution occurred at the B-sites of the PZT films. However, the ferroelectric properties decreased when the substituted ions exceeded 4% because substitution occurred at both B- and A-sites. Consequently, it is important to accurately introduce substituted ions into the B-sites in a PZT film to improve the ferroelectric properties.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1-8 |
| ページ数 | 8 |
| ジャーナル | Integrated Ferroelectrics |
| 巻 | 141 |
| 号 | 1 |
| DOI | |
| 出版ステータス | Published - 2013 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学
- セラミックおよび複合材料
- 電子材料、光学材料、および磁性材料
- 材料化学
- 凝縮系物理学
- 制御およびシステム工学