抄録
Two traps related leakage mechanism is proposed to explain the tail distribution of the DRAM retention characteristics. The main mode is explained by the trap assisted tunneling with one trap. We propose that the tail mode is created when the two traps are close enough to cooperate for increasing the leakage current. We calculate both the main and the tail distributions with the Monte Carlo method by using one basic equation deduced from our model for the first time.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 37-40 |
| ページ数 | 4 |
| ジャーナル | Technical Digest - International Electron Devices Meeting |
| 出版ステータス | Published - 1999 |
| 外部発表 | はい |
| イベント | 1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA 継続期間: 1999 12月 5 → 1999 12月 8 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 電子工学および電気工学
- 材料化学