抄録
passivation against Cu contamination is a key technology for realizing multilevel Cu interconnection for ultralarge scale integrated circuits (ULSI). Phosphosilicate glass (PSG) with rapid thermal annealing (RTA) is found to provide no less of a passivation effect than furnace-annealed (FA) PSG films, while significantly reducing the thermal budget of the PSG annealing from 900DGRC × 60 s (RTA). This suggests that the PSG-RTA process is applicable to 0.25 μm level metal oxide semiconductor (MOS) ULSIs, since both the amount of Cu diffusion and thermal budget are withing the limits of 0.25 μm MOS device technology.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 734-736 |
| ページ数 | 3 |
| ジャーナル | Journal of the Electrochemical Society |
| 巻 | 141 |
| 号 | 3 |
| 出版ステータス | Published - 1994 3月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電気化学
- 表面、皮膜および薄膜
- 表面および界面