Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and organic doping sources

Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and organic doping sources is presented. Diethylzinc and diethylselenide were used as the p-type and n-type doping sources, respectively. Electrical properties and surface morphology of the impurity-doped layers together with their growth condition dependence were investigated. Good controllability and reproducibility of the doping level were confirmed. The maximum doping levels of 1.8×10¹⁸ and 1×10¹⁹ cm^-3 were successfully attained for p-InP and n-InP, respectively. These results promise further safe metalorganic vapor-phase epitaxy by using organic compounds for all precursors.