InAsPSb/InAs diode laser emitting in the 2.5μm range

S. Akiba; Yuichi Matsushima; T. Iketani; M. Usami

InAsPSb/InAs diode laser emitting in the 2.5μm range

S. Akiba^*, Yuichi Matsushima, T. Iketani, M. Usami

^*この研究の対応する著者

研究成果: Article › 査読

17 被引用数 (Scopus)

抄録

A double heterostructure consisting of InAsPSb alloys was made by LPE-growth on InAs substrates. Lasing action was confirmed at 15-55 K, where the emission wavelength was 2.5-2.7 μm.

本文言語	English
ページ（範囲）	1069-1071
ページ数	3
ジャーナル	Electronics Letters
巻	24
号	17
出版ステータス	Published - 1988 1月 1
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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引用スタイル

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title = "InAsPSb/InAs diode laser emitting in the 2.5μm range",

abstract = "A double heterostructure consisting of InAsPSb alloys was made by LPE-growth on InAs substrates. Lasing action was confirmed at 15-55 K, where the emission wavelength was 2.5-2.7 μm.",

author = "S. Akiba and Yuichi Matsushima and T. Iketani and M. Usami",

year = "1988",

month = jan,

day = "1",

language = "English",

volume = "24",

pages = "1069--1071",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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TY - JOUR

T1 - InAsPSb/InAs diode laser emitting in the 2.5μm range

AU - Akiba, S.

AU - Matsushima, Yuichi

AU - Iketani, T.

AU - Usami, M.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - A double heterostructure consisting of InAsPSb alloys was made by LPE-growth on InAs substrates. Lasing action was confirmed at 15-55 K, where the emission wavelength was 2.5-2.7 μm.

AB - A double heterostructure consisting of InAsPSb alloys was made by LPE-growth on InAs substrates. Lasing action was confirmed at 15-55 K, where the emission wavelength was 2.5-2.7 μm.

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M3 - Article

AN - SCOPUS:0024056664

SN - 0013-5194

VL - 24

SP - 1069

EP - 1071

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

InAsPSb/InAs diode laser emitting in the 2.5μm range

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ASJC Scopus subject areas

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