TY - JOUR
T1 - Increase of the resistivity of electroless-deposited high-Bs CoNiFeB thin films
AU - Sobue, Masataka
AU - Segawa, Takayuki
AU - Yokoshima, Tokihiko
AU - Osaka, Tetsuya
AU - Kaneko, Daiju
AU - Tanaka, Atsushi
N1 - Funding Information:
Manuscript received February 14, 200; revised May 23, 2002. This work was supported by the Research for the Future Project “Advanced Research and Development on High Density Magnetic Recording Devices by Means of Atomic Interface Design” of the Japan Society for the Promotion of Science, the Project “Establishment of Molecular Nano-Engineering by Utilizing Nanostructure Arrays and Its Development Into Microsystems” of the Center Of Excellence (COE), and by the Storage Research Consortium (SRC).
PY - 2002/9
Y1 - 2002/9
N2 - In order to increase the resistivity of electroless-deposited high-Bs CoNiFeB thin films, it was decided to investigate the effect of adding a β-alanine containing complexing agent to the plating bath. The resistivity (ρ) gradually increased as the β-alanine concentration was increased. CoNiFeB thin films with desirable soft magnetic properties, Bs = 17-17.5 kG and Hc < 3.0 Oe, were obtained under these conditions with ρ value (70-90 μΩ cm) dependant on carbon incorporation in the films. It has been suggested that carbon impurities in the films resulting from the use of the β-alanine complexing agent containing -NH2 group causes electron scattering, leading to an increase in the resistivity.
AB - In order to increase the resistivity of electroless-deposited high-Bs CoNiFeB thin films, it was decided to investigate the effect of adding a β-alanine containing complexing agent to the plating bath. The resistivity (ρ) gradually increased as the β-alanine concentration was increased. CoNiFeB thin films with desirable soft magnetic properties, Bs = 17-17.5 kG and Hc < 3.0 Oe, were obtained under these conditions with ρ value (70-90 μΩ cm) dependant on carbon incorporation in the films. It has been suggested that carbon impurities in the films resulting from the use of the β-alanine complexing agent containing -NH2 group causes electron scattering, leading to an increase in the resistivity.
KW - Additives
KW - CoNiFe
KW - Electroless deposition
KW - High B
KW - Organic
KW - Resistivity
KW - Soft magnetic thin films
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U2 - 10.1109/TMAG.2002.802676
DO - 10.1109/TMAG.2002.802676
M3 - Conference article
AN - SCOPUS:0036762048
SN - 0018-9464
VL - 38
SP - 2228
EP - 2230
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
IS - 5 I
T2 - 2002 International Magnetics Conference (Intermag 2002)
Y2 - 28 April 2002 through 2 May 2002
ER -