抄録
We studied the influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN multiple quantum wells (MQWs) mainly in relation to a quantum-confined Stark effect. We performed a systematic time-resolved photoluminescence measurement of MQWs for various carrier densities and three different well widths (2.5, 4.0, and 5.5 nm). We show that the energy shift and the change in carrier lifetime are explained well by the free carrier screening effect which compensates for the internal electric field.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 3071-3074 |
| ページ数 | 4 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 92 |
| 号 | 6 |
| DOI | |
| 出版ステータス | Published - 2002 9月 15 |
ASJC Scopus subject areas
- 物理学および天文学（全般）