Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures

J. Qiu^*, Q. D. Qian, R. L. Gunshor, M. Kobayashi, D. R. Menke, D. Li, N. Otsuka

^*この研究の対応する著者

研究成果: Article › 査読