Influence of growth condition on superconducting characteristics of InN on sapphire (0001)

T. Inushima*, T. Takenobu, M. Motokawa, K. Koide, A. Hashimoto, A. Yamamoto, Y. Saito, T. Yamaguchi, Y. Nanishi

*この研究の対応する著者

研究成果: Conference contribution

10 被引用数 (Scopus)

抄録

In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm 2 V -1 s -1 and the carrier concentrations of 6 × 10 18 cm -3 ∼ 7 × 10 19 cm -3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H c1 and H c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.

本文言語English
ホスト出版物のタイトルPhysica Status Solidi C: Conferences
ページ364-367
ページ数4
1
DOI
出版ステータスPublished - 2002
外部発表はい
イベント2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany
継続期間: 2002 7月 222002 7月 25

Other

Other2nd International Workshop on Nitride Semiconductors, IWN 2002
国/地域Germany
CityAachen
Period02/7/2202/7/25

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子材料、光学材料、および磁性材料
  • 材料化学

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