In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm 2 V -1 s -1 and the carrier concentrations of 6 × 10 18 cm -3 ∼ 7 × 10 19 cm -3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H c1 and H c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.
|ホスト出版物のタイトル||Physica Status Solidi C: Conferences|
|出版ステータス||Published - 2002|
|イベント||2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany|
継続期間: 2002 7月 22 → 2002 7月 25
|Other||2nd International Workshop on Nitride Semiconductors, IWN 2002|
|Period||02/7/22 → 02/7/25|
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