Influence of growth condition on superconducting characteristics of InN on sapphire (0001)

T. Inushima; T. Takenobu; M. Motokawa; K. Koide; A. Hashimoto; A. Yamamoto; Y. Saito; T. Yamaguchi; Y. Nanishi

doi:10.1002/pssc.200390064

Influence of growth condition on superconducting characteristics of InN on sapphire (0001)

T. Inushima^*, T. Takenobu, M. Motokawa, K. Koide, A. Hashimoto, A. Yamamoto, Y. Saito, T. Yamaguchi, Y. Nanishi

^*この研究の対応する著者

研究成果: Conference contribution

10 被引用数 (Scopus)

抄録

In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm ² V ^-1 s ^-1 and the carrier concentrations of 6 × 10 ¹⁸ cm ^-3 ∼ 7 × 10 ¹⁹ cm ^-3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H _c1 and H _c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.

本文言語	English
ホスト出版物のタイトル	Physica Status Solidi C: Conferences
ページ	364-367
ページ数	4
版	1
DOI	https://doi.org/10.1002/pssc.200390064
出版ステータス	Published - 2002
外部発表	はい
イベント	2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany 継続期間: 2002 7月 22 → 2002 7月 25

Other

Other	2nd International Workshop on Nitride Semiconductors, IWN 2002
国/地域	Germany
City	Aachen
Period	02/7/22 → 02/7/25

ASJC Scopus subject areas

凝縮系物理学
電子材料、光学材料、および磁性材料
材料化学

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Inushima, T, Takenobu, T, Motokawa, M, Koide, K, Hashimoto, A, Yamamoto, A, Saito, Y, Yamaguchi, T & Nanishi, Y 2002, Influence of growth condition on superconducting characteristics of InN on sapphire (0001). in Physica Status Solidi C: Conferences. 1 edn, pp. 364-367, 2nd International Workshop on Nitride Semiconductors, IWN 2002, Aachen, Germany, 02/7/22. https://doi.org/10.1002/pssc.200390064

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title = "Influence of growth condition on superconducting characteristics of InN on sapphire (0001)",

abstract = "In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm 2 V -1 s -1 and the carrier concentrations of 6 × 10 18 cm -3 ∼ 7 × 10 19 cm -3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H c1 and H c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.",

author = "T. Inushima and T. Takenobu and M. Motokawa and K. Koide and A. Hashimoto and A. Yamamoto and Y. Saito and T. Yamaguchi and Y. Nanishi",

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T1 - Influence of growth condition on superconducting characteristics of InN on sapphire (0001)

AU - Inushima, T.

AU - Takenobu, T.

AU - Motokawa, M.

AU - Koide, K.

AU - Hashimoto, A.

AU - Yamamoto, A.

AU - Saito, Y.

AU - Yamaguchi, T.

AU - Nanishi, Y.

PY - 2002

Y1 - 2002

N2 - In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm 2 V -1 s -1 and the carrier concentrations of 6 × 10 18 cm -3 ∼ 7 × 10 19 cm -3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H c1 and H c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.

AB - In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm 2 V -1 s -1 and the carrier concentrations of 6 × 10 18 cm -3 ∼ 7 × 10 19 cm -3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H c1 and H c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.

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BT - Physica Status Solidi C: Conferences

T2 - 2nd International Workshop on Nitride Semiconductors, IWN 2002

Y2 - 22 July 2002 through 25 July 2002

ER -

Influence of growth condition on superconducting characteristics of InN on sapphire (0001)

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