抄録
In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm 2 V -1 s -1 and the carrier concentrations of 6 × 10 18 cm -3 ∼ 7 × 10 19 cm -3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H c1 and H c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.
本文言語 | English |
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ホスト出版物のタイトル | Physica Status Solidi C: Conferences |
ページ | 364-367 |
ページ数 | 4 |
版 | 1 |
DOI | |
出版ステータス | Published - 2002 |
外部発表 | はい |
イベント | 2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany 継続期間: 2002 7月 22 → 2002 7月 25 |
Other
Other | 2nd International Workshop on Nitride Semiconductors, IWN 2002 |
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国/地域 | Germany |
City | Aachen |
Period | 02/7/22 → 02/7/25 |
ASJC Scopus subject areas
- 凝縮系物理学
- 電子材料、光学材料、および磁性材料
- 材料化学