抄録
Coverage of the (Formula presented)-reconstructed region on quenched Si(111) surfaces has been compared for two types of Si wafers with different oxygen concentration, Czochralski and modified float zone (m-FZ) wafers. The m-FZ wafer clearly showed the lower coverage, which suggested that oxygen had some influence on the formation of a (Formula presented) structure. The activation energy of formation of the (Formula presented) structure has been estimated to be 2.4 eV.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 9863-9866 |
| ページ数 | 4 |
| ジャーナル | Physical Review B - Condensed Matter and Materials Physics |
| 巻 | 58 |
| 号 | 15 |
| DOI | |
| 出版ステータス | Published - 1998 1月 1 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学