Coverage of the (Formula presented)-reconstructed region on quenched Si(111) surfaces has been compared for two types of Si wafers with different oxygen concentration, Czochralski and modified float zone (m-FZ) wafers. The m-FZ wafer clearly showed the lower coverage, which suggested that oxygen had some influence on the formation of a (Formula presented) structure. The activation energy of formation of the (Formula presented) structure has been estimated to be 2.4 eV.
|ジャーナル||Physical Review B - Condensed Matter and Materials Physics|
|出版ステータス||Published - 1998 1月 1|
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