(In,Ga)As gated-vertical quantum dot with an Al2O3 insulator

T. Kita; D. Chiba; Y. Ohno; H. Ohno

doi:10.1063/1.2437060

(In,Ga)As gated-vertical quantum dot with an Al₂O₃ insulator

T. Kita, D. Chiba, Y. Ohno, H. Ohno^*

^*この研究の対応する著者

研究成果: Article › 査読

7 被引用数 (Scopus)

抄録

The authors fabricated a gated-vertical (In,Ga)As quantum dot with an Al2 O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dIdV-V characteristics shows clear Coulomb diamonds at 1.1 K. The metal-insulator gate structure allowed the authors to control the number of electrons in the quantum dot from 0 to a large number estimated to be about 130.

本文言語	English
論文番号	062102
ジャーナル	Applied Physics Letters
巻	90
号	6
DOI	https://doi.org/10.1063/1.2437060
出版ステータス	Published - 2007
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.2437060

他のファイルとリンク

引用スタイル

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abstract = "The authors fabricated a gated-vertical (In,Ga)As quantum dot with an Al2 O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dIdV-V characteristics shows clear Coulomb diamonds at 1.1 K. The metal-insulator gate structure allowed the authors to control the number of electrons in the quantum dot from 0 to a large number estimated to be about 130.",

author = "T. Kita and D. Chiba and Y. Ohno and H. Ohno",

note = "Funding Information: The authors wish to acknowledge S. Tarucha, Y. Nishi, T. Hatano, and T. Yamaguchi for valuable discussions. They also thank K. Ohtani for discussion and his guidance. This work was partly supported by the Japan Society for the Promotion of Science.",

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AU - Kita, T.

AU - Chiba, D.

AU - Ohno, Y.

AU - Ohno, H.

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AB - The authors fabricated a gated-vertical (In,Ga)As quantum dot with an Al2 O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dIdV-V characteristics shows clear Coulomb diamonds at 1.1 K. The metal-insulator gate structure allowed the authors to control the number of electrons in the quantum dot from 0 to a large number estimated to be about 130.

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