TY - JOUR
T1 - Initial propagation stage of direct copper plating on non-conducting substrates
AU - Ono, Sachiko
AU - Naitoh, Kazuhisa
AU - Osaka, Tetsuya
N1 - Funding Information:
Parts of this work were financially supported by grant-in-aid for Scientific Research on Priority Area of Electrochemistry of Ordered Interfaces from Ministry of Education, Science, Sports and Culture, Japan.
PY - 1999/6/1
Y1 - 1999/6/1
N2 - The initial propagation stage of direct copper plating on non-conducting resin substrates was studied by a high resolution transmission electron microscope, an electron diffraction and a scanning electron microscope analysis to confirm the mechanism. In this process, ABS resin substrate was catalyzed by Pd/Sn mixed catalyst and accelerated in a solution containing copper ions before the direct plating. Cubic Cu2O crystals approximately 20-50 nm in size were formed along the migration front of direct copper plating to provide stepping stones for copper propagation, while few such crystals were found on a residual uncovered catalyst area. At the thicker copper plated area, Cu2O crystals were embedded in a flat copper deposit which was composed of small crystals 10-20 nm in size. The Cu2O crystals should be activation sites for copper deposition by the formation of additive free metallic copper according to disproportionation reaction and so that promote the propagation speed. This effect can be explained by 'a modified stepwise propagation mechanism' in which Cu2O crystals act a critical roll for the copper propagation as stepping stones in addition to dispersed Cu particle seeds and Pd catalyst cluster seeds.
AB - The initial propagation stage of direct copper plating on non-conducting resin substrates was studied by a high resolution transmission electron microscope, an electron diffraction and a scanning electron microscope analysis to confirm the mechanism. In this process, ABS resin substrate was catalyzed by Pd/Sn mixed catalyst and accelerated in a solution containing copper ions before the direct plating. Cubic Cu2O crystals approximately 20-50 nm in size were formed along the migration front of direct copper plating to provide stepping stones for copper propagation, while few such crystals were found on a residual uncovered catalyst area. At the thicker copper plated area, Cu2O crystals were embedded in a flat copper deposit which was composed of small crystals 10-20 nm in size. The Cu2O crystals should be activation sites for copper deposition by the formation of additive free metallic copper according to disproportionation reaction and so that promote the propagation speed. This effect can be explained by 'a modified stepwise propagation mechanism' in which Cu2O crystals act a critical roll for the copper propagation as stepping stones in addition to dispersed Cu particle seeds and Pd catalyst cluster seeds.
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U2 - 10.1016/S0013-4686(99)00073-0
DO - 10.1016/S0013-4686(99)00073-0
M3 - Conference article
AN - SCOPUS:0032685096
SN - 0013-4686
VL - 44
SP - 3697
EP - 3705
JO - Electrochimica Acta
JF - Electrochimica Acta
IS - 21
T2 - Proceedings of the 1999 2nd International Symposium on Electrochemical Microsystems Technologies - Electrochemical Applications of Microtechnology
Y2 - 9 September 1999 through 11 September 1999
ER -