抄録
We report, for the first time, the successful fabrication of InP/InGaAs double-heterojunction bipolar transistors (DHBT’s), grown by metalorganic chemical vapor deposition (MOCVD) on Si substrates. The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates. The dislocations are found to increase the recombination current very little in the neutral base region, but increase the generation-recombination current at the emitter-base interface.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 369-371 |
| ページ数 | 3 |
| ジャーナル | IEEE Electron Device Letters |
| 巻 | 12 |
| 号 | 7 |
| DOI | |
| 出版ステータス | Published - 1991 7月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学