抄録
The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 3815-3817 |
| ページ数 | 3 |
| ジャーナル | Japanese journal of applied physics |
| 巻 | 30 |
| 号 | 12 |
| DOI | |
| 出版ステータス | Published - 1991 12月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）