Inp/ingaas heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition

Kenji Kurishima; Toshiki Makimoto; Takashi Kobayashi; Tadao Ishibashi

doi:10.1143/JJAP.30.L258

Inp/ingaas heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition

Kenji Kurishima, Toshiki Makimoto, Takashi Kobayashi, Tadao Ishibashi

研究成果: Article › 査読

13 被引用数 (Scopus)

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We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1 x 10¹⁹ cm^-3 show excellent current gain characteristics (current gains h_FE>300, ideality factors n_B< 1.25) at growth temperatures ranging from 500 to 575°C. In addition, Zn out-diffusion from the base layers into the undoped spacer layers is well suppressed to as low as 5 x 10¹⁷ cm^-3.

本文言語	English
ページ（範囲）	L258-L261
ジャーナル	Japanese journal of applied physics
巻	30
号	2B
DOI	https://doi.org/10.1143/JJAP.30.L258
出版ステータス	Published - 1991 2月
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/JJAP.30.L258

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@article{99c76cc259044c3a93a0b420c56dc90d,

title = "Inp/ingaas heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition",

abstract = "We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1 x 1019 cm-3 show excellent current gain characteristics (current gains hFE>300, ideality factors nB< 1.25) at growth temperatures ranging from 500 to 575°C. In addition, Zn out-diffusion from the base layers into the undoped spacer layers is well suppressed to as low as 5 x 1017 cm-3.",

keywords = "HBT, InGaAs, InP, MOCVD, Zn diffusion",

author = "Kenji Kurishima and Toshiki Makimoto and Takashi Kobayashi and Tadao Ishibashi",

year = "1991",

month = feb,

doi = "10.1143/JJAP.30.L258",

language = "English",

volume = "30",

pages = "L258--L261",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "2B",

}

TY - JOUR

T1 - Inp/ingaas heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition

AU - Kurishima, Kenji

AU - Makimoto, Toshiki

AU - Kobayashi, Takashi

AU - Ishibashi, Tadao

PY - 1991/2

Y1 - 1991/2

N2 - We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1 x 1019 cm-3 show excellent current gain characteristics (current gains hFE>300, ideality factors nB< 1.25) at growth temperatures ranging from 500 to 575°C. In addition, Zn out-diffusion from the base layers into the undoped spacer layers is well suppressed to as low as 5 x 1017 cm-3.

AB - We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1 x 1019 cm-3 show excellent current gain characteristics (current gains hFE>300, ideality factors nB< 1.25) at growth temperatures ranging from 500 to 575°C. In addition, Zn out-diffusion from the base layers into the undoped spacer layers is well suppressed to as low as 5 x 1017 cm-3.

KW - HBT

KW - InGaAs

KW - InP

KW - MOCVD

KW - Zn diffusion

UR - http://www.scopus.com/inward/record.url?scp=0026108566&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026108566&partnerID=8YFLogxK

U2 - 10.1143/JJAP.30.L258

DO - 10.1143/JJAP.30.L258

M3 - Article

AN - SCOPUS:0026108566

SN - 0021-4922

VL - 30

SP - L258-L261

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 2B

ER -

Inp/ingaas heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition

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