TY - JOUR
T1 - Internally matched, ultralow DC power consumption CMOS amplifier for L-band personal communications
AU - Ohsato, Kousuke
AU - Yoshimasu, Toshihiko
PY - 2004/5
Y1 - 2004/5
N2 - An internally matched, extremely low operation voltage amplifier monolithic microwave integrated circuit (MMIC) has been implemented in a 0.35-μm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology for L-band personal communications. At 1.6 GHz the MMIC amplifier has a gain of 6.4 dB and a noise figure of 4.8 dB at a drain voltage of 0.6 V and a current of 2 mA. The MMIC amplifier exhibits a Gain/Power quotient as high as 5.33 dB/mW, which we believe is the highest recorded for Si CMOS MMIC technology.
AB - An internally matched, extremely low operation voltage amplifier monolithic microwave integrated circuit (MMIC) has been implemented in a 0.35-μm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology for L-band personal communications. At 1.6 GHz the MMIC amplifier has a gain of 6.4 dB and a noise figure of 4.8 dB at a drain voltage of 0.6 V and a current of 2 mA. The MMIC amplifier exhibits a Gain/Power quotient as high as 5.33 dB/mW, which we believe is the highest recorded for Si CMOS MMIC technology.
KW - CMOS
KW - L-band personal communications
KW - MMIC amplifier
KW - SOI
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U2 - 10.1109/LMWC.2004.827911
DO - 10.1109/LMWC.2004.827911
M3 - Article
AN - SCOPUS:2542482839
SN - 1531-1309
VL - 14
SP - 204
EP - 206
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 5
ER -